Reduced N-doped diamond defect gen file size, add to-do note

Former-commit-id: 3297c6803c2acb4fa635267599beaffb684318b9

docs/Dev_ToDo.md

@@ -128,7 +128,7 @@
   - Add our recommended  workflow (gam, NKRED, std, ncl). See https://sites.tufts.edu/andrewrosen/density-functional-theory/vasp/ for some possibly useful general tips.
   - Update parsing notebook to reflect preferred usage of eFNV correction (rather than FNV with LOCPOTs).
   - Dielectric should be aligned with the x,y,z (or a,b,c) of the supercell right? Should check, and note this in the tutorial
-  - Note that bandfilling corrections are no longer supported, as in most cases they shouldn't be used anyway, and if you have band occupation in your supercell then the energies aren't accurate anyway as it's a resonant/shallow defect, and this is just lowering the energy so it sits near the band edge (leads to false charge state behaviour being a bit more common etc). If the user wants to add bandfilling corrections, they can still doing this by calculating it themselves and adding to the `corrections` attribute.
+  - Note that bandfilling corrections are no longer supported, as in most cases they shouldn't be used anyway, and if you have band occupation in your supercell then the energies aren't accurate anyway as it's a resonant/shallow defect, and this is just lowering the energy so it sits near the band edge (leads to false charge state behaviour being a bit more common etc). If the user wants to add bandfilling corrections, they can still doing this by calculating it themselves and adding to the `corrections` attribute. (Link our code in old `pymatgen` for doing this)
   - Cite https://iopscience.iop.org/article/10.1088/1361-648X/acd3cf for validation of Voronoi tessellation
     approach for interstitials, but note user can use charge-density based approach if needing to be
     super-lean for some reason. Can use SMTG wiki stuff for this.